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the last one thx you so so so much
by two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make higher microwave fre- quencies feasible with a corresponding increase in sensitiv- ity.We note that oscillators and mixers can be realized up to several GHz on silicon substrates and several tens of GHz on GaAs substrates.It should be possible to fabricate a large array of sensitive detectors monolithically integrated with their associated electronics.
by two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make higher microwave fre- quencies feasible with a corresponding increase in sensitiv- ity.We note that oscillators and mixers can be realized up to several GHz on silicon substrates and several tens of GHz on GaAs substrates.It should be possible to fabricate a large array of sensitive detectors monolithically integrated with their associated electronics.
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