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Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH) for unstirred solutions.5 Stirring the solution during etching provided more controllable process conditions by enabling whisker formation over a wider range of solution concentration (compared to unstirred solutions).When using stirred solutions,selective etching occurred for concentrations of 0.001–0.01 M KOH.Note that these solutions are significantly more dilute than for the unstirred case.The solution concentrations that enable the selective etching of dislocations appear to correspond to moderately diffusion-limited etching conditions.Decreasing the solution concentration further resulted in a strongly diffusion-limited etch process and a smooth etched surface morphology free of whiskers.
Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH) for unstirred solutions.5 Stirring the solution during etching provided more controllable process conditions by enabling whisker formation over a wider range of solution concentration (compared to unstirred solutions).When using stirred solutions,selective etching occurred for concentrations of 0.001–0.01 M KOH.Note that these solutions are significantly more dilute than for the unstirred case.The solution concentrations that enable the selective etching of dislocations appear to correspond to moderately diffusion-limited etching conditions.Decreasing the solution concentration further resulted in a strongly diffusion-limited etch process and a smooth etched surface morphology free of whiskers.
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