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This is also true for hole transport if the two valence band tops are close in energy or aligned.
Based on the above fact an overall generic operating concept for the design of high ZT thermoelectrics has emerged which is shown in Fig.8.The matrix phases and second phase may show
large differences in semiconducting band gap,however,the carriers can easily transport if there is a small energy difference（DE) in the relevant valence or conduction band edges.This energy difference should be comparable to the magnitude of thermal energy at elevated temperatures of kBT,here kB is the
Boltzmann constant and T is the absolute temperature.15
A system where heat flow can be greatly inhibited without affecting the carrier mobility is found in p-type PbTe with endotaxial SrTe nanocrystals.The relative observed insensitivity of hole scattering is attributed to favorable valence band alignment of SrTe and PbTe with 1%Na2Te.
This is also true for hole transport if the two valence band tops are close in energy or aligned.
Based on the above fact an overall generic operating concept for the design of high ZT thermoelectrics has emerged which is shown in Fig.8.The matrix phases and second phase may show
large differences in semiconducting band gap,however,the carriers can easily transport if there is a small energy difference（DE) in the relevant valence or conduction band edges.This energy difference should be comparable to the magnitude of thermal energy at elevated temperatures of kBT,here kB is the
Boltzmann constant and T is the absolute temperature.15
A system where heat flow can be greatly inhibited without affecting the carrier mobility is found in p-type PbTe with endotaxial SrTe nanocrystals.The relative observed insensitivity of hole scattering is attributed to favorable valence band alignment of SrTe and PbTe with 1%Na2Te.
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