英语翻译本文分别以P3HT和PCBM为电子给体和受体材料以氯苯为溶剂,制备了不同混合比例及不同膜厚的ITO/PEDOT:

本文分别以P3HT和PCBM为电子给体和受体材料以氯苯为溶剂,制备了不同混合比例及不同膜厚的ITO/PEDOT:PSS/P3HT:PCBM/Al器件,并通过改变抽真空干燥的时间、真空度大小及利用不同溶剂蒸汽处理来研究器件的光电性能.伏安特性曲线表明混合比例、膜厚、真空度、抽真空时间及溶剂蒸汽处理对器件性能有较大的影响.结果得出P3HT/PCBM混合比例为1:0.8,真空度0.03MPa下抽真空干燥,及用DMF溶剂的蒸汽处理,得到短路电流为7.497mA/cm2,光电转换效率为1.707%的高性能器件.
This paper takes P3HT and PCBM as the electron donor and acceptor materialsusing chlorobenzene as solvent,different mixing ratio and ITO/PEDOT:PSS/P3HT:PCBM/Al devices with different thickness were prepared,and the vacuum drying time,vacuum degree and the solvent vapor treatment to study the optical properties of devices by changing the pumping.The volt ampere characteristic curve showed that the mixing ratio,thickness,degree of vacuum,vacuum time and solvent vapor treatment on device performance has great influence.The results showed that P3HT/PCBM mixing ratio of 1:0.8,vacuumdegree 0.03MPa vacuum drying,and with the DMF solvent vapor treatment,get the short circuit current is 7.497mA/cm2,the photoelectric conversion efficiency for high performance devices 1.707%